Re: MOS fab capabilities over the years?

From: Gerrit Heitsch <>
Date: Sat, 23 Nov 2013 08:31:53 +0100
Message-ID: <>
On 11/23/2013 08:12 AM, Bil Herd wrote:
> About an hour ago I found the binder that at one time held the HMOSII
> Design Guide.
> My memory is HMOSII transition was 85'ish, HMOSI was 84'ish.  NMOS before
> that, CMOS was a Pipedream about '86 on.

We have 8501 and 8360 mit 1984 datecodes. As far as I know, '8' means 
HMOS-II, so at least some chips where made with it middle to end of '84.

Might explain why they die so easily, MOS was still tweaking the process.

> I could check but I think the real differences were effective channel
> lengths and changes to the back-bias generator to create greater gate
> thresholds that in theory shut of the FET's faster and drew less power per
> FET.  I am not sure if the backbias generator drew enough power itself so
> as to offset a lot of the savings.

When I compared my (still working) 7501R1 with a 8501R1, I noticed that 
the 7501 consumes about 20mA _less_ than the 8501 when used in the same 
system. It was along the lines of 85mA and 105mA. So maybe HMOS-II 
consumes less power, but something in the 264 design more than made up 
for it.


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Received on 2013-11-23 08:01:25

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