From: Spiro Trikaliotis (trik-news_at_gmx.de)
Date: 2003-06-16 10:19:15
Hello,
sorry for replying so late, but my internet broke on Friday. :-(
On Fri, Jun 13, 2003 at 10:07:41PM +0200, Gideon Zweijtzer wrote:
> No. SRAM is not made of flip-flops. This would take up a huge amount of
> silicon area, because a flip-flop is made of two latches, which are each
> made up out of two gates (and a 2-input CMOS gate is at least 4
> transistors). Traditional SRAM cells are made up of only 6 transistors,
> but I have heard that newer SRAM cells are made out of 2 or 4
> transistors only.
From my (analog) electronics days, I remember that there is an analog FF
consisting of only 2 transisters (bipolar, I have to admit). Do I understand
you wrong, or don't you like it to call some analog circuitry a FF?
> back after raising the power back to its nominal value.] SRAM is very
> low-power though, because the active loop is static and does not consume
> power, other than some leakage. Leakage is very small, because when the
> level of the SRAM cell does not change, there is just some charge kept
> on the insulated gate of the transistors.
Hm, well. This might be right with CMOS-SRAMs nowadays. Anyway, I doubt a
TTL-SRAM (or, even better, ECL-SRAM ;-)) having less power consumption than
a DRAM. Even with PMOS- or NMOS-SRAM, I don't think that it takes less power
than a DRAM.
Spiro.
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